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GFET-S11 for Sensing applications GFET-S11 for Sensing applications

GFET-S11 for Sensing applications

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Product Description

GFET-S11 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000


The GFET-S11 chip from Graphenea provides 31 graphene devices with a van der Pauw (vdP) geometry, distributed in 3 different sizes. 3 vdPs have a 2x2mm2 footprint, 14 vdPs have a 500x500µm2 footprint and 14 vdPs have a 125x125µm2 footprint. These devices have an optimized geometry for 4-probe measurements in a vdP configuration. These varying graphene device dimensions allow investigation of geometry dependence on device properties, enabling immediate optimization.


TYPICAL SPECIFICATIONS

· Growth method: CVD synthesis

· Chip dimensions: 10 mm x 10 mm

· Chip thickness: 675 ÃŽ¼m

· Number of GFETs per chip:  31

· Gate oxide thickness: 90 nm

· Gate oxide material: SiO2

· Dielectric Constant of the SiO2 layer: 3.9

· Resistivity of substrate: 1-10 ÃŽ©.cm

· Metallization: Chromium/Gold 5/45nm

· Graphene field-effect mobility: >1000 cm2/V.s

· Dirac point: <50 V

· Minimum working devices: >75 %

ABSOLUTE MAXIMUM RATINGS

· Maximum gate-source voltage: ± 50 V

· Maximum temperature rating: 150 °C

· Maximum drain-source current density 107A.cm-2







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