Growth Method: CVD synthesis
Transfer Method: Wet transfer method
Appearance (Color): Transparent
Appearance (Form): Film
Number of graphene layers: 1
Thickness (theoretical) 0.345 nm
FET mobility on Al‚‚O: 2800 cm2/Vs
Hall mobility on SiO‚/Si: 2000-3500 cm2/Vs
Sheet Resistance on SiO2/Si: 450±40 Ohms/sq (1cm x1cm)
Grain size: Up to 20 m
All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene.
Raman Spectroscopy on each batch: I(G)/I(2D)<0.5; I(D)/I(G)<0.05
Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity
If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.