Monolayer Graphene on SiO2,/Si 300 nm

Get a Price/Quote

Ask A Question Send Inquiry

Product Specifications

GRAPHENE FILM:

Growth method: CVD synthesis

Appearance (color): Transparent

Transparency: > 97%

Coverage: > 95%

Number of graphene layers: 1

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)

FET Electron Mobility on SiO2/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802

Sheet Resistance on SiO2/Si: 450Ã‚Â±40 Ohms/sq (1cm x1cm)

Grain size: Up to 20um

Available Size:

4 Wafer

10 mm x 10 mm Pack of 4

10 mm x 10 mm

1 inch x 1 inch

ULTRANANOTECH PRIVATE LIMITED

Describe Your BUYING Requirement *

* Tips on getting accurate quotes. Please include product name, order quantity, usage, special requests if any in your inquiry.

Email *

Mobile No.*

Name *

Company Name *

Pincode *

City *

Multilayer CVD Graphene on Nickel Wafer Get latest Price

Send Inquiry

Graphene on Copper 2000 TEM Grids Get latest Price

Send Inquiry

Monolayer CVD Graphene Film on Glass Get latest Price

Send Inquiry

CVD Graphene on Transmission Electron Microscopy (TEM) Grids Get latest Price

Send Inquiry