
GRAPHENE FILM:
Growth method: CVD synthesis
Appearance (color): Transparent
Transparency: > 97%
Coverage: > 95%
Number of graphene layers: 1
Thickness (theoretical): 0.345 nm
FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)
FET Electron Mobility on SiO2/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802
Sheet Resistance on SiO2/Si: 450ñ40 Ohms/sq (1cm x1cm)
Grain size: Up to 20um
Available Size:
4 Wafer
10 mm x 10 mm Pack of 4
10 mm x 10 mm
1 inch x 1 inch
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