Monolayer Graphene on SiO2,/Si 300 nm

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Product Specifications

GRAPHENE FILM:

Growth method: CVD synthesis

Appearance (color): Transparent

Transparency: > 97%

Coverage: > 95%

Number of graphene layers: 1

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)

FET Electron Mobility on SiO2/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802

Sheet Resistance on SiO2/Si: 450Ã‚Â±40 Ohms/sq (1cm x1cm)

Grain size: Up to 20um

Available Size:

4 Wafer

10 mm x 10 mm Pack of 4

10 mm x 10 mm

1 inch x 1 inch

ULTRANANOTECH PRIVATE LIMITED

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