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Monolayer Graphene on SiO2,/Si 300 nm

Monolayer Graphene on SiO2,/Si 300 nm

Product Details:

X

Product Specifications

  • GRAPHENE FILM
  • Transparent

Trade Information

  • Others, Paypal
  • 4-5
  • Middle East, Eastern Europe, North America, Asia
  • All India
  • Technical Data sheets are available upon request

Product Description

GRAPHENE FILM: 

Growth method: CVD synthesis

Appearance (color): Transparent

Transparency: > 97%

Coverage: > 95%

Number of graphene layers: 1

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)

FET Electron Mobility on SiO2/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802

Sheet Resistance on SiO2/Si: 450±40 Ohms/sq (1cm x1cm)

Grain size: Up to 20um


Available Size:

4 Wafer

10 mm x 10 mm  Pack of 4

10 mm x 10 mm

1 inch x 1 inch


ULTRANANOTECH PRIVATE LIMITED

* Tips on getting accurate quotes. Please include product name, order quantity, usage, special requests if any in your inquiry.



B- 205, Prime Blue Forest, Rajapallya, Hoodi, Bengaluru - 560048, Karnataka, India
Mr Arup Purkayastha (Managing Director )
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