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Printing Material

We are a well recognized supplier of latest Printing Material in the markets across country. Our firm is procuring products from the leading producers in the industry. With their back support, we are able to serve our customers irresistibly for highly efficient, durable and reliable quality of material. We are presenting a wide range including GFET-S10, GFET-S20 and more for sensing applications. Our experts make sure that only quality approved products are delivered to the customers from our end. They also take care of the relevant packaging of all thePrinting Materials to ensure their safe deliveries to the destination.
Product Image (3D Printing Filament PLA Plus)

PLA Plus 3D Printing Filament

3D Printing Filament PLA Plus White 1 kg

Product Image (Tpu 3d Printing Filament)

TPU 3d Printing Filament

3D Printing Filament TPU Flexible Colors TPU 0.8 kg

Product Image (3D Printing Filament ABS)

ABS 3D Printing Filament

3D Printing Filament ABS Normal Colors 1kg Transparent Colors 1kg Fluorescent Colors 1kg

Product Image (3D Printing Filament HIPS)

HIPS 3D Printing Filament

3D Printing Filament HIPS Normal Colors 1kg

Product Image (Printing Filament)

PVA 3D Printing Filament

3D Printing Filament PVA Transparent 500g

Product Image (3D Printing Filament HPLA)

HPLA 3D Printing Filament

3D Printing Filament HPLA Natural 1 kg

Product Image (3D Printing Filaments PCL)

3D PCL Printing Filaments

3D Printing Filaments PCL Natural 1 kg

Product Image (3D Printing Filament PC)

3D Printing Filament PC

3D Printing Filament PC Transparent 1 kg

Product Image (3D Printing Filaments POM )

3D Printing Filaments POM

3D Printing Filaments POM Natural 1kg

Product Image (SKU - ABS)

3D Printing Filament ABS

Normal Colors 1kg Transparent Colors 1kg Fluorescent Colors 1kg

Product Image (3D Printing Filament PETG)

3D Printing Filament PETG

3D Printing Filament PETG Normal Colors 1kg Carbon Fiber 1 kg

Product Image (3D Printing Filament PLA)

3D Printing Filament PLA

3D Printing Filament PLA Normal PLA Colors 1 kg Transparent PLA Colors 1 kg Fluorescent PLA Colors 1 kg Silk-Like Colors PLA 1 kg Silk-Like Rainbow PLA 1 kg PLA Light Change Colors 200g PLA Light Change Colors 1 kg Temperature Change Color PLA 200g Temperature Change Color PLA 1 kg Glow In The Dark PLA 200g Glow In The Dark PLA 1 kg Shining PLA 1 kg Metal Like PLA 1 kg Wood Like PLA 0.8 kg Matte Like Color PLA 1 kg Conductive PLA 200g Carbon Fiber PLA 1 kg Marble PLA 1 kg Rainbow PLA 1 kg

Product Image (3D Printing Filaments ASA)

3D Printing Filaments ASA

3D Printing Filaments ASA Natural 1 kg

Product Image (SKU - PLA)

3D Printing Filament - PLA

3D Printing Filament-PLA Normal PLA Colors 1 kg Transparent PLA Colors 1 kg Fluorescent PLA Colors 1 kg Silk-Like Colors PLA 1 kg Silk-Like Rainbow PLA 1 kg PLA Light Change Colors 200g PLA Light Change Colors 1 kg Temperature Change Color PLA 200g Temperature Change Color PLA 1 kg Glow In The Dark PLA 200g Glow In The Dark PLA 1 kg Shining PLA 1 kg Metal Like PLA 1 kg Wood Like PLA 0.8 kg Matte Like Color PLA 1 kg Conductive PLA 200g Carbon Fiber PLA 1 kg Marble PLA 1 kg Rainbow PLA 1 kg

Product Image (3D Printing Filaments PCL)

3D Printing Filaments PCL

3D Printing Filaments PCL Natural 1 kg

Product Image (SKU - TPU)

3D Printing Filament TPU

Flexible Colors TPU 0.8 kg

Product Image (DFAIA)

Diamond Fully Automatic Immuno Analyzer

fully atomatic immunoassy system, zero carry over by using disposable tips for liquid handling level sensing for samples reagent and washing solutions, multiple assays can be performed in ojne run,

Product Image (GFET-S12)

GFET-S12 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 27 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

Product Image (GFET-S10)

GFET-S10 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 2/50nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

Product Image (GFET-S11)

GFET-S11 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 31 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

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GFAB - Graphene Foundry Service

PROCESSING SPECIFICATIONS Batch Size: from 40 cm2 to 1000s Mask: according to design rules, and can be printed by customer or Graphenea Graphene growth, transfer, processing and dicing under one roof Metallization: Cr/Au as standard. Optional wetting layers: Ni, Ti. Optional contact layers: Al, AuPd Encapsulation: polymeric, ALD Al2O3 or ALD Al2O3 +Si3N4 Minimum feature size: 5 m Dicing Get in touch for a quote QUALITY CONTROL All our samples are subjected to a rigorous QC in order to ensure a high quality products. Raman Spectroscopy inspection Optical Microscopy inspection Electrical conductivity on test structures

Product Image (GFET-S20)

GFET-S20 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold-Palladium 2/50 nm Graphene field-effect mobility: >1000 cm2/V.s Encapsulation: 50 nm Al2O3 + 100 nm Si3N4 Dirac point (back gating): <50 V Dirac point (liquid gating): <1V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

Product Image (13)

3D Multilayer Freestanding Graphene Foam, 2"x2"

Price: 150.00 - 300.00 INR
  • Delivery Time:15 Days
  • Supply Ability:1 kg Per Day
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