PLA Plus 3D Printing Filament

3D Printing Filament PLA Plus White 1 kg

TPU 3d Printing Filament

3D Printing Filament TPU Flexible Colors TPU 0.8 kg

ABS 3D Printing Filament

3D Printing Filament ABS Normal Colors 1kg Transparent Colors 1kg Fluorescent Colors 1kg

HIPS 3D Printing Filament

3D Printing Filament HIPS Normal Colors 1kg

PVA 3D Printing Filament

3D Printing Filament PVA Transparent 500g

HPLA 3D Printing Filament

3D Printing Filament HPLA Natural 1 kg

3D PCL Printing Filaments

3D Printing Filaments PCL Natural 1 kg

3D Printing Filament PC

3D Printing Filament PC Transparent 1 kg

3D Printing Filaments POM

3D Printing Filaments POM Natural 1kg

3D Printing Filament ABS

Normal Colors 1kg Transparent Colors 1kg Fluorescent Colors 1kg

3D Printing Filament PA (Nylon)

Natural 1 kg

3D Printing Filament PETG

3D Printing Filament PETG Normal Colors 1kg Carbon Fiber 1 kg

3D Printing Filament HIPS

Normal Colors 1kg

3D Printing Filament PLA

3D Printing Filament PLA Normal PLA Colors 1 kg Transparent PLA Colors 1 kg Fluorescent PLA Colors 1 kg Silk-Like Colors PLA 1 kg Silk-Like Rainbow PLA 1 kg PLA Light Change Colors 200g PLA Light Change Colors 1 kg Temperature Change Color PLA 200g Temperature Change Color PLA 1 kg Glow In The Dark PLA 200g Glow In The Dark PLA 1 kg Shining PLA 1 kg Metal Like PLA 1 kg Wood Like PLA 0.8 kg Matte Like Color PLA 1 kg Conductive PLA 200g Carbon Fiber PLA 1 kg Marble PLA 1 kg Rainbow PLA 1 kg

3D Printing Filaments ASA

3D Printing Filaments ASA Natural 1 kg

3D Printing Filament - PLA

3D Printing Filament-PLA Normal PLA Colors 1 kg Transparent PLA Colors 1 kg Fluorescent PLA Colors 1 kg Silk-Like Colors PLA 1 kg Silk-Like Rainbow PLA 1 kg PLA Light Change Colors 200g PLA Light Change Colors 1 kg Temperature Change Color PLA 200g Temperature Change Color PLA 1 kg Glow In The Dark PLA 200g Glow In The Dark PLA 1 kg Shining PLA 1 kg Metal Like PLA 1 kg Wood Like PLA 0.8 kg Matte Like Color PLA 1 kg Conductive PLA 200g Carbon Fiber PLA 1 kg Marble PLA 1 kg Rainbow PLA 1 kg

3D Printing Filament HPLA

Natural 1 kg

3D Printing Filaments PCL

3D Printing Filaments PCL Natural 1 kg

3D Printing Filament PLA+

White 1 kg

3D Printing Filament TPU

Flexible Colors TPU 0.8 kg

3D Printing Filament PC

Transparent 1 kg

3D Printing Filament PVA

Transparent 500g

Diamond Fully Automatic Immuno Analyzer

fully atomatic immunoassy system, zero carry over by using disposable tips for liquid handling level sensing for samples reagent and washing solutions, multiple assays can be performed in ojne run,

GFET-S12 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 27 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

GFET-S10 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 2/50nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

GFET-S11 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 31 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

GFAB - Graphene Foundry Service

PROCESSING SPECIFICATIONS Batch Size: from 40 cm2 to 1000s Mask: according to design rules, and can be printed by customer or Graphenea Graphene growth, transfer, processing and dicing under one roof Metallization: Cr/Au as standard. Optional wetting layers: Ni, Ti. Optional contact layers: Al, AuPd Encapsulation: polymeric, ALD Al2O3 or ALD Al2O3 +Si3N4 Minimum feature size: 5 m Dicing Get in touch for a quote QUALITY CONTROL All our samples are subjected to a rigorous QC in order to ensure a high quality products. Raman Spectroscopy inspection Optical Microscopy inspection Electrical conductivity on test structures

GFET-S20 for Sensing applications

TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Resistivity of substrate: 1-10 .cm Metallization: Chromium/Gold-Palladium 2/50 nm Graphene field-effect mobility: >1000 cm2/V.s Encapsulation: 50 nm Al2O3 + 100 nm Si3N4 Dirac point (back gating): <50 V Dirac point (liquid gating): <1V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2

3D Multilayer Freestanding Graphene Foam, 2"x2"