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GFET-S10 for Sensing applications GFET-S10 for Sensing applications

GFET-S10 for Sensing applications

Product Details:


Product Description

GFET-S10 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000

The GFET-S10 chip from Graphenea provides 36 graphene devices distributed in a grid pattern on the chip.  Thirty devices have a Hall-bar geometry and six have a 2-probe geometry.  The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices.  There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties.

The new version replaces Ni/Al contacts by Cr/Au, which are more inert and stable. 


· Growth method: CVD synthesis

· Chip dimensions: 10 mm x 10 mm

· Chip thickness: 675 ÃŽ¼m

· Number of GFETs per chip:  36

· Gate oxide thickness: 90 nm

· Gate oxide material: SiO2

· Dielectric Constant of the SiO2 layer: 3.9

· Resistivity of substrate: 1-10 ÃŽ©.cm

· Metallization: Chromium/Gold 2/50nm

· Graphene field-effect mobility: >1000 cm2/V.s

· Dirac point: <50 V

· Minimum working devices: >75 %


· Maximum gate-source voltage: ± 50 V

· Maximum temperature rating: 150 °C

· Maximum drain-source current density


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